Optical Pump Rectification Emission: Route to Free-Standing Surface Potential Diagnostics

نویسندگان

  • L. PETERS
  • J. TUNESI
  • A. PASQUAZI
چکیده

We introduce a method for diagnosing the electric surface potential of a semiconductor based on THz surface generation. In our scheme, that we name Optical Pump Rectification Emission, a THz field is generated directly on the surface via surface optical rectification of an ultrashort pulse after which the DC surface potential is screened with a second optical pump pulse. As the THz generation directly relates to the surface potential arising from the surface states, we can then observe the temporal dynamics of the static surface field induced by the screening effect of the photo-carriers. Such an approach is potentially insensitive to bulk carrier dynamics and does not require special illumination geometries.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

High-energy terahertz surface optical rectification

The interest in surface terahertz emitters lies in their extremely thin active region, typically hundreds of atomic layers, and the agile surface scalability. The ultimate limit in the achievable emission is determined by the saturation of the several different mechanisms concurring to the THz frequency conversion. Although there is a very prolific debate about the contribution of each process,...

متن کامل

THz generation by optical rectification and competition with other nonlinear processes

We present a study of the terahertz (Tilz) generation by optical rectification in a 2 mm thick <110> ZnTe crystal. The conditions for the most efficient THz generation are described. We investigate the competition between optical rectification (OR), second harmonic generation (SHG), two photon absorption (TPA) and free-carrier absorption in the diffraction limit, for excitation spot sizes small...

متن کامل

Emission of terahertz-frequency electromagnetic radiation from bulk GaxIn1−xAs crystals

We report an experimental study of femtosecond optically excited emission of terahertz frequency electromagnetic radiation from GaxIn1−xAs bulk crystals with alloy composition in the range between 0 x 0.65. The terahertz-emission mechanisms in bulk GaxIn1−xAs were studied as a function of carrier mobility, carrier concentrations, band gap as well as polycrystal grain size. Our experiments and a...

متن کامل

Terahertz radiation and second-harmonic generation from InAs: Bulk versus surface electric-field-induced contributions

Polarized second-harmonic generation and terahertz radiation in reflection from 100 , 110 , and 111 faces of n-type InAs crystals are investigated as a function of the sample azimuthal orientation under excitation from femtosecond Ti:sapphire laser pulses. The expressions describing the second-order response optical secondharmonic generation and optical rectification in reflection from zinc-ble...

متن کامل

Radiative thermal rectification between SiC and SiO2.

By means of fluctuational electrodynamics, we calculate radiative heat flux between two planar materials respectively made of SiC and SiO2. More specifically, we focus on a first (direct) situation where one of the two materials (for example SiC) is at ambient temperature whereas the second material is at a higher one, then we study a second (reverse) situation where the material temperatures a...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2017